型号:

SI7431DP-T1-GE3

RoHS:无铅 / 符合
制造商:Vishay Siliconix描述:MOSFET P-CH 200V 2.2A 8-SOIC
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
SI7431DP-T1-GE3 PDF
标准包装 1
系列 TrenchFET®
FET 型 MOSFET P 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 200V
电流 - 连续漏极(Id) @ 25° C 2.2A
开态Rds(最大)@ Id, Vgs @ 25° C 174 毫欧 @ 3.8A,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 135nC @ 10V
输入电容 (Ciss) @ Vds -
功率 - 最大 1.9W
安装类型 表面贴装
封装/外壳 PowerPAK? SO-8
供应商设备封装 PowerPAK? SO-8
包装 标准包装
其它名称 SI7431DP-T1-GE3DKR
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